Hot substrate deposition of fused silica

ABSTRACT

Fused silica injected or created by pyrolysis of SiCl 4  are introduced in a powder state into a vacuum chamber. Pluralities of jet streams of fused silica are directed towards a plurality of heated substrates. The particles attach on the substrates and form shaped bodies of fused silica called preforms. For uniformity the substrates are rotated. Dopant is be added in order to alter the index of refraction of the fused silica. Prepared soot preforms are vitrified in situ. Particles are heated, surface softened and agglomerated in mass and are collected in a heated crucible and are softened and flowed through a heated lower throat. The material is processed into quartz plates and rods for wafer processing and optical windows.

[0001] This application claims the benefit of U.S. Provisional Application No. 60/258,494, filed Dec. 29, 2000.

SUMMARY OF THE INVENTION

[0002] Soot deposition on a plurality of substrates for fiber optic or any other high technology applications that require very high quality water-free synthetic fused silica such as optical wave guides, lenses and prisms for the deep ultraviolet spectrum are described here. Hot Substrate Deposition (HSD) of silica for fiber optic and other applications, processes and apparatus for superior quality synthetic fused silica fiber optic preforms that can be used in the MCVD (modified chemical deposition method) and OVD (outside vapor-phase deposition), VAD (vapor-phase axial deposition) applications are also part of this invention. The process allows for deposition of fused silica preforms of doped, undoped or modulation doped, and preforms in any radial profile of the index of refraction are also part of this invention. Controlled density of the deposited material as well as the provision for a plurality of substrates leads to increased productivity and higher yield production compared to the current processes for synthetic fused silica described in numerous patents. Water-free ultrapure synthetic fused silica having desired grain size is also part of this invention. Processes and apparatus for further processing of such synthetic fused silica into rods, tubes and plates for various applications are also part of this invention.

[0003] Fused silica and possibly various dopants are either created by pyrolysis of SiCl₄ or other compounds or they are introduced in a powder state into a vacuum chamber that might be at vacuum or desired pressure for the particular processes. Pluralities of jet streams of fused silica are directed towards a plurality of substrates heated to certain temperatures. The particles attach themselves on the substrates and form shaped bodies of fused silica called □preforms□. For uniformity purposes the substrates may be rotated clockwise (CW) or counterclockwise (CCW) and may be linearly moved with respect to the sources of fused silica streams. Fused silica streams from a fused silica powder or quartz powder may move with respect to the preform being fabricated. In one embodiment, the sources and preforms may both move linearly with respect to each other as well as relate with respect to each other. Depending on the substrate temperature of the silica preforms, the preforms may have different densities and states of compaction. Very thick layers are deposited in this way without cracking or peeling from the substrates. Dopant may be added in order to alter the index of refraction of the fused silica. If continuously added, the whole preforms may be doped. If added during certain time periods, one may create desired profiles of the index of refraction. The dopant may be added as part of the silica jet stream, through the surrounding deposition atmosphere or through the porous substrate. The dopant may be in solid, liquid or gaseous form.

[0004] Such prepared soot preforms are later vitrified in situ, or they are treated separately. Quartz material, doped, undoped, or preferentially doped to achieve a certain index of refraction profile is obtained. This material is further processed into quartz tubes for fiber optics and other iapplications, quartz rods for fused silica wafers for semiconductors and various optical applications and quartz plates for wafer processing and optical windows.

[0005] Processes and apparatus for making of metal oxides by oxidation of metal halides, formation of fiber optic preforms, doped and undoped, and making of high quality fused silica glass are described herein. Metal oxide, silicon dioxide in particular, is deposited on controlled temperature substrates made from graphite, silicon carbide, ceramic, quartz, metal and metal alloys. The substrates are tubular or rod-like in shape, having round, rectangular or polygonal cross-sections. The substrates and the deposited material are heated by means of resistive heating, RF heating or by any other means, and by any combination among them. The material is dried, doped (if needed), and densified. The material is later converted into high quality fused silica tubes, rods or quartz plates of desired sizes.

[0006] These and further and other objects and features of the invention are apparent in the disclosure, which includes the above and ongoing written specification, with the claims and the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007]FIG. 1 is a schematic perspective representation of a porous preform-general chamber, which may be horizontal, vertical or any other position.

[0008]FIG. 2 shows a cross-sectional view of the chamber shown in FIG. 1, in which one or a plurality of deposition rods made from carbon, SiC, ceramic, graphite, metal or metal alloys, or combinations thereof may be rotated to collect the glass soot.

[0009]FIG. 3 is a cross-section showing spacing and movements of three or more substrates and preforms.

[0010]FIG. 4 is a longitudinal cross-section of the chamber showing relative longitudinal movements and rotations.

[0011]FIG. 5 show multiple preforms with rotation and translation in the silica powder streams in the chamber.

[0012]FIG. 6 shows a heated substrate and fused silica preform.

[0013]FIG. 7 shows several different cross-sections of preforms and substrates with heating and gas delivery elements.

[0014]FIG. 8 shows several different substrate end attachments of FIG. 7 in further powder streams and forming a cladding layer.

[0015]FIG. 9A shows vitrified silica on a heated substrate.

[0016]FIG. 9B shows a vitrified silica tube member.

[0017]FIG. 10 is a cross-sectional vertical view of forming a fused silica tubular or solid preform member, which is formed as pulled from a melted porous or vitrified preform in a tubular preform forming chamber.

[0018]FIG. 11 shows a tube-forming chamber with a substrate heater.

[0019]FIG. 12 shows a tubular preform-forming chamber, such as shown in FIG. 10, with a recharging station for adding a preform for continuous article production. As shown in FIG. 12, the deposition tube has a straight end. After the above deposition tube is aligned with the lower deposition tube and the two are rotated together, the upper deposition tube is heated by radio frequency heating of the graphite, carbon based or SiC based tube, or a graphite, carbon based or SiC based heater within the tube, to soften the inside of the cylindrical porous preform and allow the cylindrical porous preform to slide down along the aligned tubes, recharging the working preform position.

[0020]FIG. 13 shows a chamber similar to that shown in FIG. 12 with a substrate resistance heater.

[0021]FIG. 14 shows a single unit in which the porous preform is generated around a vertical porous or non porous deposition substrate. Silica stream generators, which are burners or powder delivery units, are connected for vertical and radial movements to ensure the desired distance and flow from the growing porous preform. The cylindrical porous preform is transferred to the lower fused silica tubular preform-forming chamber by opening the retractable shield and heating the deposition substrate with radio frequency heating, so that the center of the porous preform can be softened to allow the preform to slide down the deposition tube when ready. In the fused silica preform forming section, rotation is maintained under controlled heating, and the fused silica tube is pulled from the porous preform.

[0022]FIG. 15 shows chambers similar to those shown in FIG. 14 with a substrate power delivery system in the lower chamber.

[0023]FIG. 16 shows chambers similar to those shown in FIG. 15 with an electric field generator for further purification of the soft silica.

[0024]FIG. 17 shows a chamber with multiple heating zones for creating and melting soot and drawing a rod or tube from the melted soot.

[0025]FIG. 18 shows a chamber similar to that shown in FIG. 17 with an electric field generator for unwanted impurities removal and plasma tube surface removal of the same impurities and other surface elements.

[0026]FIG. 19 shows a chamber similar to that shown in FIG. 19 with an electric field generator and a plasma tube surface removal unit with gas introduction or withdrawal within the formed tube and with a double crucible with gas introduced in the second crucible.

[0027]FIG. 20 shows formation of a plate or sheet from a fused and vitrified silica tube-like preform.

[0028]FIG. 21 shows formation of a plate or sheet from a fused and vitrified silica rod-like preform.

[0029]FIG. 22 shows a combined system of FIG. 19 and FIG. 20 for continuous production of high quality plate or shaped type silica members.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The invention provides a controlled substrate temperature fused silica process and apparatus.

[0031] Process and apparatus for fused silica soot of desired size (doped and undoped), fiber optic preforms that are undoped, doped with the desired refractive index profile, or fully doped, fused silica tubes, fused silica fibers and rods and fused silica plates and fused silica members having desired shapes are described herein.

[0032]FIGS. 1, 2 and 3 show a plurality of substrates 11 at controlled temperature housed in a vacuum chamber 1. A plurality of silica stream generators 3 are shown. The silica powder stream generators 3 represent burners for oxidation of chemical compounds into fused silica powder or silica powder injection units. Powder is made in separate chambers, or natural quartz powder may be injected in the chamber for preform deposition. Generators 3, which may be burners for oxidation 5 of chemical compounds 7 such as SiCl4, SiF4 and others into fused silica particles, are either embedded in the chamber wall 8 or they are placed inside the chamber. The proximity of the silica particle providers or stream generators 3 to the collectors or substrates 11 as well as the distance of the substrates from the center 9 of the chamber are optimized based on the number of the substrates 11, the number of the silica stream generators 3 and their relative positions. The chamber 1 may have round, rectangular or any other suitable shape that is needed or is useful to optimize the process. Vacuum ports 13 with valves 15, vents 17 with valves 19 and a plurality of gas inlet ports 21 with valves 23 and inert gas ports 22 with valves 24 are also added to the chamber. The chamber may be vertical, horizontal, sloped and any other position or combination suitable for the new process. The chamber walls 8 may have a cooling jacket 25 for temperature control and appropriate venting apparatus for the gasses generated during the deposition. Appropriate openings are provided at one end, at each end or on one or two sides of the chamber for loading and unloading of the chamber.

[0033] A plurality of power feeds for resistive heating 29 or RF coils 31 and appropriate power feedthroughs 33 and shields 35 are also included in the chamber.

[0034] The chamber may have plurality of particle provider ports 37 for introduction of soot 39 made during another operation or natural quartz powder.

[0035] The chamber and the substrate assembly may be rotated in respect to each other clockwise or counterclockwise and may be relatively axially moved at certain desired speeds, which are determined empirically. Each substrate may be rotated around its axis clockwise or counterclockwise at certain desired speeds. All rotations are aimed at establishing conditions for good thickness and uniformity properties of the deposited material in the porous perform 41.

[0036] As shown in FIG. 3, substrates and preforms B1, B2 and B3 are spaced from a center by radius R1 and from the chamber wall by a greater radius R2. The substrates and preforms 41 are relatively rotated 42 and moved 44 and 46 initially or as the preforms grow.

[0037]FIG. 4 shows a tubular substrate 11 with deposited material 43 forming a preform 41. Each substrate 11 may be made of solid, porous or perforated material made from silica, graphite, silicon carbide, ceramic, metal, metal alloys or combinations thereof. It may have round, rectangular or any other cross section. It may be tubular, solid or tubular with solid or tubular core made from the same or other material. The cross-sections of the substrates may be the same throughout the preforms or may vary in certain controlled manners to obtain silica members of desired shapes or sizes. The ends 45 may have the same cross section throughout, or the ends may have different dimensions or shapes. The ends 45 may be mechanically connected to the substrate 11 or they may be part of the substrate. A gas line 47 or vacuum line may be connected with the hollow portion of each substrate having tubular shape, with or without a central rod.

[0038]FIG. 4 shows an apparatus consisting of a vacuum chamber 51 having a plurality pressure controls in the form of vacuum ports 53, vent lines 55, and gas ports 57 doping ports 59 for purging and doping purposes, plurality of power feedthroughs 61 with or without cooling lines 63 in them for resistive, RF 65 or any other form of heating the substrate 11 of the preform 41 and the preform itself. The chamber may have multiple heating zones 67 to accommodate the process being performed there. Rotation and translation assembly mechanisms 60 rotate 62 and translate 64 the substrate 11 and preform 41. Slip rings 66 conduct power from source 68 to heat the substrate 11.

[0039] In FIG. 4 the dopant gases 58 surround the preform 41, and purge or dopant gases 56 from purge or dopant line 54 flow outward from the porous substrate through the porous preform 41.

[0040] In FIG. 5 chamber 51 has three growing preforms 41 mounted on substrates 11, which are mounted on independent rotation mechanisms or multiple rotators 70, which rotate the preforms with respect to each other as the support ends 45 rotate 62 and translate 64 mechanisms 70.

[0041]FIG. 6 shows a preform 41 on a substrate 11 with the deposited soot 43 and an end attachment 48. Heating element 78 connected to power source 68 heats the substrate 11 for controlled temperature deposition on the preform 41.

[0042] As shown in FIG. 7, preforms 41 and substrates may have any specific shapes such as solid or tubular with round polygonal or square preforms and substrates with solid or hollow substrates, and they may employ solid, porous or tubular heating elements 78.

[0043]FIG. 8 shows several preferred end attachments 48 for substrates. The end attachments may be pinned, threaded or shrunk on the substrates, or they may be part of the substrate.

[0044] When the substrate is fused silica, the tube is ready to be used or ready to be softened and to be compacted and densified into a solid. When the substrate has desired core properties, the fused silica member may be transformed into fiber optic preform ready for fiber fabrication.

[0045]FIGS. 9A and 9B show a vitrified silica tube 90 on a heated substrate 11 and after removal from the substrate.

[0046] The substrate 11 may be heated, and the fused silica tube 90 may be slid off the substrate after a film is melted adjacent the substrate, after the end attachments 48 are removed.

[0047] The tubing 90 that is removed has a hole 93 and a tube wall 95, as shown in FIG. 9A. It may be compressed into a solid doped or undoped fused silica rod.

[0048] In FIG. 10 a vacuum chamber 101 is oriented vertically. A preform 41 is supported vertically on its substrate 11 which has generally hemispherical ends 112. The preform 41 may be supported by the substrate rod itself, if the rod substrate cross-section is varied. A chamber seal and gas delivery assembly at the top 102 of the chamber has a rotation 104 and translation 106 mechanism 103. A gas delivery system 105 with a valve 107 supplies purging or dopant gas to the hollow porous substrate. The preform is doped or undoped silica 109 having a controlled OH content. The chamber has a plurality of valved gas vents 111, valved vacuum ports 113, and valved dopant inlets 115. Walls 117 of the chamber have appropriate heat shielding 119 and jacket cooling. Resistive or RF heating elements 121 provided in a plurality of heating zones 123 soften the silica, which flows 125. The moving silica flows around end 112 of substrate 11 as purge gas 127 flows. The resultant fused silica member, in this case tube 129, is rotated and pulled by mechanism 130 at the bottom 131 of the chamber 101.

[0049]FIG. 11 is similar to FIG. 10. A substrate power system 133 is added to heat the substrate 11 and to assist the heating elements 121.

[0050]FIG. 12 has a chamber 101 similar to the chambers shown in FIG. 10.

[0051] A movable shelf 135 may move inward and outward 137 and up and down 139 to control doping, heating and softening of the preform 41, and to separate the chamber 101 into two chambers 141 and 143. Lower chamber 143 has a separate set of valved ports 144, 145, 147, 149 which precisely control the conditions in the lower chamber 141. The shelf 135 divides the chamber 101 into separate heat zones 151, 153. In addition, heat outputs of heating elements 121 may be varied to create additional heat zones within zones 151 and 153.

[0052] In FIG. 13 a substrate power delivery system 133 is added to control precise heating on the substrate 11. The heating elements 121 in the lower heat zone melt and flow 125 the soft silica from the lower preform. When silica is depleted from the lower preform, heat is increased on the substrate 11 to soften the inner layer of silica, and the upper part of the preform slides downward. A new preform can be added above shelf 135, either via a door not shown here or through the chamber seal assembly.

[0053]FIG. 14 shows the vacuum chamber 165, which combines a vertically oriented chamber 51 such as shown in FIG. 4 used for continuous production of glass material with a fused silica member-forming chamber 101. After the necessary material preparation steps have been made appropriate pressure and atmosphere is introduced for the glass fabrication process, tubular or solid glass material having the desired cross sectional shape is made in the upper chamber 167. The burners 3 or material feeders 37 feed material 73 as well as the glass preform 41 being made can rotate 62. A retractable shelf holder 169 is placed under the growing refill preform 41 to prevent distractions in the tube formation process in lower chamber 171. The preforms 41 might be used as produced or they may be dried, doped and densified before the fabrication of the fused silica fabrication process begins. Heat zones HZ1, HZ2, HZ3 and HZ4 control desired temperatures in chamber 165.

[0054]FIG. 14 shows process and apparatus for continuous fabrication of fused silica glass having either tubular, solid rod having the desired cross sections. The vacuum chamber 165 may constitute a plurality of interconnected chambers similar to chamber 51 and 101. It also may be connected with a chamber for fused silica plate or bar production. Provisions for resistive, RF or any other heating of the substrate and the preform have been included. Multiple independently controlled heating zones HZ1-HZ4 are used.

[0055] The upper chamber 167 serves for fabrication of the preform. The preform is later moved down to chamber 171 and used for continuous fabrication of fused silica glass in either tubular or solid rod form having the desired cross sections. Resistive or RF heating is used to decouple the preforms from the substrates, if needed.

[0056]FIG. 15 shows a chamber 165 similar to that shown in FIG. 14. A plasma tube and/or fused silica member surface removal unit 173 is added either above or below the rotating and pulling mechanism 130. A separate substrate heater 175 is added in the lower fabrication chamber.

[0057]FIG. 16 is similar to FIG. 15. An electric field generator 177 with electrodes 179 and 181 is added to create an electric field across the silica flow 125. Fused silica feed is softened and shaped therein. An ultrapure clear, bubble free tube, plate or bar is extracted from the chamber. Plasma process unit 177 removes unwanted impurities segregated on the surface layer by the electric field.

[0058]FIG. 17 shows a chamber 183 for producing silica power 185 and other metal oxides from soot 187 having desired particle size. Fine oxide particles from generators such as in situ made from burners 3 or delivered through plurality of ports 37 on the chamber are heated in mass 189 and allowed to recombine. Depending on the time they stay hot and the distance the particles travel, they recombine into larger grains of desired size. Plasma plating using single or multiple stage plasma of the silica particles may be employed. The vacuum chamber 183 has multizone heating zones Z1-Z6. Resistive heating, RF heating, plasma or other heating methods of the grains may be employed.

[0059] The soot is collected in a crucible collector 191 with a heater 193 and a gas/dopant gas injector 195, as shown in FIG. 17. It may be softened 196 in a heated throat 198, funneled and flowed around a former 197 and filled/purged with gas 199 to form a tube 21 into chamber 203.

[0060] Another chamber employing the new soot grain enlargement process for tube or rod fabrication is as shown in FIG. 18. In that embodiment, electric field generator 177 and electrodes 179 and 181 provide an electric field across the softened fused silica flow 125. A plasma tube or fused silica member surface removal unit 173 is added in the embodiment.

[0061]FIG. 19 shows a single or double crucible 203 in the chamber. A vacuum chamber 183 having plurality of vacuum ports, gas inlet ports, vent ports, and a fused silica feed material introduction port is heated by resistance or RF heating or any other means of heating, connected through plurality of feedthroughs. A second crucible 203 made from graphite, silicon carbide, ceramic material, metal, metal alloys or combinations thereof receives the material from the feed crucible 191. A fused silica tube is produced. Pluralities of ultrasound generators are in contact with the crucible to provide proper mixing and outgassing. Additional vacuum ports are placed above the softened material to remove any gas bubbles. The chamber can be a single chamber or plurality of chambers.

[0062]FIG. 20 shows apparatus for plate or any other fused silica member production.

[0063]FIGS. 21 and 22 show forming a fused silica member 210 in a vacuum chamber 211, which has two sections 213 and 215. In FIG. 21, a softened fused silica tube 217 is fed into chamber section 213. Heaters 219 around the chamber maintain required heat. In chamber section 213 a relatively high heat is maintained for flowing the softened fused silica into the desired form. A lower heat is maintained in chamber section 215 in which the fused silica form further solidifies.

[0064]FIG. 20 shows a plate/bar fabrication chamber 211. A vacuum chamber section 213 having plurality of valved vacuum ports 221, gas inlet ports 223, vent ports 225 and a fused silica feed material 217 introduction port 227 is heated by resistance of RF heating 219 or any other means of heating, connected through a plurality of feedthroughs. A crucible 230 made from graphite, silicon carbide, ceramic material, metal or metal alloys receives the material 231 from the feed tube 217, softens, dopes, degassifies and solidifies the material. A fused silica plate or a bar 210 is produced. A plurality of ultrasound generators 233 are in contact with the crucible to provide proper mixing and outgassing. Additional vacuum ports 235 are placed above the softened material to remove any gas bubbles. The chamber can be a single chamber or plurality of chambers 213, 215 with sequentially controlled heat zones. The shaped member 210 exits the chambers through pressure and heat seals 237 and 239. Rollers 240 pull the shaped member out of the chambers.

[0065]FIG. 21 shows a plate or bar forming chamber 211 similar to that sown in FIG. 20, in which the infeed is a solid rod 241.

[0066]FIG. 22 shows a fused silica plate, bar or otherwise shaped member 210 forming chamber 211 directly coupled to chamber 183, such as shown in FIG. 19, for receiving the fused silica tube input directly from the output of chamber 183.

[0067] The heating of the substrate may be accomplished by separate heaters positioned axially along or in the substrate. Alternatively if resistance heating is used, the heating wire may be varied in shape, form or size along the length of the substrate. The substrate may be linear or planar and may be made in one element or plural elements. A singe control or multiple independent controls may be used. The varied heating of the substrate may be used to effect uniformity of the preform in an axial direction. Alternatively the varied heating may be used to effect varied densities or porosities of the perform along it's length or per unit area.

EXAMPLES

[0068] Silica Glass Body Fabrication

[0069] Production of synthetic fused silica glass bodies having controlled density and desired size and shape have been of interest to the natural quartz or synthetic fused silica glass industry for some time. The densities of the formed silica body mainly depend on the temperature of the flame, the distance between the substrate and the burner, and rotational and translational speeds of the substrate. Densities between 10% and 30% have been reported by this approach. The size of the body and the optimal ratio between the wall thickness (W_(t)) and the outside diameter (D_(o)), W_(t)/D_(o), as well as the ratio between the outside diameter (D_(o)) and the Inside diameter (D_(i)), D_(o)/D_(i), and the way the body is held during the deposition depend greatly on the density of the body surface temperature and the body density.

[0070] To overcome the current limitations and to produce large glass bodies made from synthetic fused silica, natural quartz or combination thereof, substrate heating and surface heating has been introduced. The amount of the surface heating will greatly depend on the substrate temperature, the chamber pressure, the size of the quartz particles and their temperature at impact of the surface and the size of the quartz member fabricated. Silica preforms, doped or undoped, having desired density and optimized diameter ratio can be fabricated following the examples shown below.

Example No. 1 Silica Body Fabrication

[0071] A heated substrate having temperature of about 1000°-1400° C. is subjected to plurality of silica particle stream either generated in situ by high temperature reactions of silica precursors, or fabricated in a separate process and then introduced via ports on the chamber in pure form, doped form, mixed with neutral gas, gas plasma or combination thereof. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited, and layer by layer the silica member is formed. The silica particle stream may be doped or undoped. The temperature of the substrate might be sufficient to keep the surface of the so formed body at the same temperature. The silica body so formed is hot enough to allow for formation of a solid fused silica body. Densities between 80% and 100% may be expected as a result.

[0072] The substrate may be tubular or solid form having the desired diameter and cross section. Desired ratios between the outside and inside diameters may be obtained using this method. If tubular, the substrate may be solid or porous, depending on the dopant or reactive gas flow desired. This achieves optimized silica material-to-gas contact. The hot substrate may also serve as a heater for the dopant gas and increased reaction time. Porous substrates can also diminish the possibility of gas bubbles entrapment near the surface of the substrate.

[0073] Substrate and surface temperatures between about 700° C. and 1600° C. may result in various silica densities from 10% to 100%. Controlling the fused silica body temperature by controlling the substrate and surface temperature may result in control of the pore size and pore density in the material. If the variation is in the radial direction, exposure to dopant gas over periods of time will result in radial gradient of the dopant distribution. By doing so silica members having radially graded indexes of refraction may be fabricated.

[0074] If the substrate is other than a silica core, doped or undoped made from fused silica or natural quartz; the resulting silica member may be in tubular form or may be in solid form after collapsing the tube.

[0075] Employing non uniform substrate heating along the length of the body, one may obtain a silica member having variable density over its length.

Example No. 2: Doped and Undoped Layer Combination Silica Body Fabrication

[0076] Step 1.

[0077] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited, and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0078] Step 2.

[0079] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for about 0.3 to 6 hours at temperature of about 800-1400° C., the silica material is doped.

[0080] Step 3.

[0081] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. A vitrified tubular silica body having desired wall thickness is formed.

[0082] Step 4.

[0083] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0084] Step 5.

[0085] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped other wall OW_(t) desired wall thickness is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the wall thicknesses of the doped and undoped portion of the tubular member, e.g., 1:2, 1:3, 1:5, etc.

Example No. 3 Doped Non-Porous and Undoped Porous Layer Combination Silica Body Fabrication

[0086] Step 1.

[0087] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited, and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0088] Step 2.

[0089] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of about 800-1400° C., the silica material is doped.

[0090] Step 3.

[0091] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. A vitrified tubular silica body having desired wall thickness is formed.

[0092] Step 4.

[0093] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the wall thicknesses of the doped and undoped portion of the tubular member, e.g., 1:2, 1:3, 1:5, etc.

Example No. 4 Undoped Core and Fluorine Doped Cladding Fiber Optic Preform fabrication

[0094] Step 1.

[0095] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0096] Step 2.

[0097] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0098] Step 3.

[0099] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0100] Step 4.

[0101] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of about 800-1400° C., the silica material is doped.

[0102] Step 5.

[0103] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0104] Step 6.

[0105] The substrate is transferred out of the deposition chamber area, and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed.

[0106] Step 7.

[0107] The so formed silica member is collapsed and a solid rod like silica member is formed. Undoped core (high index of refraction material) surrounded by fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length.

Example No. 5 Doped Core and Fluorine Doped Cladding Fiber Optic Preform Fabrication

[0108] Step 1.

[0109] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica and dopant particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0110] Step 2.

[0111] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0112] Step 3.

[0113] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0114] Step 4.

[0115] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of about 800-1400° C., the silica material is doped.

[0116] Step 5.

[0117] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0118] Step 6.

[0119] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted, and the substrate is removed.

[0120] Step 7.

[0121] The so formed silica member is collapsed and a solid rod like silica member is formed. Undoped core (high index of refraction material) surrounded by fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross section and size can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length.

Example No. 6 Doped Core and Fluorine Doped Graded Index of Refraction Cladding Fiber Optic Preform Fabrication

[0122] Step 1.

[0123] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica and dopant particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0124] Step 2.

[0125] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0126] Step 3.

[0127] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0128] Step 4.

[0129] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₁ hours at temperature of 800-1400° C., the silica material is doped. T□ is about 0.3 to 2 hours.

[0130] Step 5.

[0131] The substrate and/or chamber temperature is raised to about 1400-1500° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0132] Step 6.

[0133] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0134] Step 7.

[0135] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₂>T₁ hours at a temperature of about 1100° C.-1400° C., the silica material is doped. T₂ is about 0.4-4 hours.

[0136] Step 8.

[0137] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0138] Step 9.

[0139] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0140] Step 10.

[0141] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₃>T₂ hours at temperature of about 1100° C.-1400° C., the silica material is doped. T₃ is about 0.5-5 hours.

[0142] Step 11.

[0143] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0144] Step 12.

[0145] The so formed vitrified tubular silica body is heated to temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0146] Step 13.

[0147] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₄>T₃ hours at temperature of about 1100° C.-1400° C., the silica material is doped. T₄ is about 0.6 to 6 hours

[0148] Step 14.

[0149] The substrate and/or chamber temperature is raised to 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0150] Steps 15-17.

[0151] Repeat Steps 12-14 while further reducing the exposure to gaseous dopant, SiF₄ in this case.

[0152] Step 18.

[0153] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed.

[0154] Step 19.

[0155] The so formed silica member is collapsed and a solid rod like silica member is formed. Undoped core (high index of refraction material) surrounded by graded index of refraction fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross section and size can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length.

Example No. 7 Doped Core Having Graded Index of Refraction and Fluorine Doped Graded Index of Refraction Cladding Fiber Optic Preform Fabrication

[0156] Step 1.

[0157] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica and dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0158] Step 2.

[0159] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0160] Step 3.

[0161] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams and reduced dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0162] Step 4.

[0163] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0164] Step 5.

[0165] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams and further reduced dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. Porous silica body having about 25-35% solid glass density is obtained by this process.

[0166] Step 6.

[0167] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0168] Step 7-9.

[0169] Repeat steps 4-6 further reducing the dopant levels in the deposited silica by lowering the dopant concentrations in the dopant particle streams, etc.

[0170] Step 10.

[0171] The so formed vitrified tubular silica body is heated to temperature of 1300° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. Porous silica body having 25-35% solid glass density is obtained by this process.

[0172] Step 11.

[0173] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₁ hours at temperature of about 1100° C.-1400° C. the silica material is doped. T₁ is about 0.3 to 2 hours.

[0174] Step 12.

[0175] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0176] Step 13.

[0177] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. Porous silica body having about 25-35% solid glass density is obtained by this process

[0178] Step 14.

[0179] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₂>T₁ hours at temperature of about 1100° C.-1400° C. the silica material is doped. T₂ is about 0.4 to 4 hours.

[0180] Step 15.

[0181] The substrate and/or chamber temperature is raised to about 1400-1500° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0182] Step 16.

[0183] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0184] Step 17.

[0185] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₃>T₂ hours at temperature of about 1100° C.-1400° C. the silica material is doped. T₃ is about 0.6 to 6 hours.

[0186] Step 18.

[0187] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0188] Step 19.

[0189] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having 25-35% solid glass density is obtained by this process.

[0190] Step 20.

[0191] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and/or the chamber into the deposited porous silica material for T₄>T₃ hours at temperature of 1100° C.-1400° C., the silica material is doped. T₄ is about 0.6 to 6 hours

[0192] Step 21.

[0193] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified and a tubular silica body having desired doped inner wall thickness IW_(t) and undoped outer wall OW_(t) desired wall thickness is formed.

[0194] Step 22-24.

[0195] Repeat Steps 12-14 while further reducing the exposure to gaseous dopant, SiF4 in this case.

[0196] Step 25.

[0197] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed.

[0198] Step 26.

[0199] The so formed silica member is collapsed and a solid rod like silica member is formed. Undoped core (high index of refraction material) surrounded by graded index of refraction fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length. The radial distribution of the index of refraction in the core and the cladding will depend on the thickness of the doped layer deposited and on the pore density in the as deposited preform.

Example No. 8 Doped Core Having Graded Index of Refraction and Fluorine Doped Cladding Having Graded Index of Refraction Fiber Optic Preform Fabrication

[0200] Step 1.

[0201] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica and dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0202] Step 2.

[0203] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0204] Step 3.

[0205] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle stream and reduced concentration dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0206] Step 4.

[0207] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0208] Step 5.

[0209] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams and further reduced concentration dopant particle stream introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0210] Step 6.

[0211] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0212] Step 7-9.

[0213] Repeat steps 4-6 further reducing the dopant levels in the deposited silica by further lowering the dopant concentrations in the dopant particle stream. Repeat until the desired index of refraction profile in radial direction is obtained.

[0214] Step 10.

[0215] The so formed vitrified tubular silica body is heated to a temperature of about 1380° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 80-90% fused silica density is obtained by this process.

[0216] Step 11.

[0217] The so formed silica body is heated to a temperature of about 1370° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 75-85% solid glass density is obtained by this process.

[0218] Step 12.

[0219] The so formed vitrified tubular silica body is heated to temperature of 1360° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 65-75% fused silica density is obtained by this process.

[0220] Step 13.

[0221] The so formed vitrified tubular silica body is heated to a temperature of about 1330° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 50-60% fused silica density is obtained by this process.

[0222] Step 14.

[0223] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0224] Step 15.

[0225] Introducing silicon tetra fluoride, SiF₄, through the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of 1100° C.-1400° C. the silica material is doped. The amount of the SiF₄ penetrating the cladding will be proportional to the pore density and the exposure time at given temperature of the preform.

[0226] Step 16.

[0227] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired cladding layer wall thickness is formed. Repeat until the desired index of refraction profile in radial direction is obtained.

[0228] Step 17.

[0229] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed.

[0230] Step 18.

[0231] The so formed silica member is collapsed and a solid rod like silica member is formed. Undoped core (high index of refraction material) surrounded by graded index of refraction fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length. The radial distribution of the index of refraction in the core and the cladding will depend on the thickness of the doped layer deposited and on the pore density in the deposited preform.

Example No. 9 Fluorine Doped Cladding Having Graded Index of Refraction Fiber Optic Preform Fabrication Using Prefabricated Doped or Undoped Core Rod

[0232] Step 1.

[0233] Prefabricated silica doped or undoped rod is heated to a temperature of about 1400° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 90-100% fused silica density is obtained by this process.

[0234] Step 2.

[0235] Prefabricated silica doped or undoped rod is heated to a temperature of about 1380° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 80-90% fused silica density is obtained by this process.

[0236] Step 3.

[0237] The so formed silica body is heated to a temperature of about 1370° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 75-85% solid glass density is obtained by this process.

[0238] Step 4.

[0239] The so formed vitrified tubular silica body is heated to a temperature of about 1360° C. and is subjected to plurality of silica particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 65-75% fused silica density is obtained by this process.

[0240] Step 5.

[0241] The so formed vitrified tubular silica body is heated to a temperature of about 1330° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 50-60% fused silica density is obtained by this process.

[0242] Step 6.

[0243] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0244] Step 7.

[0245] Introducing silicon tetra fluoride, SiF₄, through the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of about 1100°-1400° C. the silica material is doped. The amount of the SiF₄ penetrating the cladding will be proportional to the pore density and the exposure time at given temperature of the preform.

[0246] Step 8.

[0247] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The newly deposited porous silica is vitrified, and a tubular silica body having desired cladding layer wall thickness is formed. Repeat until the desired index of refraction profile in radial direction is obtained.

[0248] Step 26.

[0249] The so formed silica member is vitrified and a solid rod like silica member is formed. Doped or undoped core (high index of refraction material) surrounded by graded index of refraction fluorine doped cladding (low index of refraction material) having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the core diameter and the outside cladding layer diameter of the fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication fiber optic preforms that are up 6 inches or more in diameter and several meters in length. The radial distribution of the index of refraction in the core and the cladding will depend on the thickness of the doped layer deposited and on the pore density in the as deposited preform.

Example No. 10 Process for Fabrication of Fluorine Doped Cladding Tube Having Graded Index of Refraction Fiber Optic Preform Fabrication

[0250] Step 1.

[0251] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1400° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 90-100% fused silica density is obtained by this process.

[0252] Step 2.

[0253] Prefabricated silica doped or undoped rod is heated to a temperature of about 1380° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 80-90% fused silica density is obtained by this process.

[0254] Step 3.

[0255] The so formed silica body is heated to a temperature of about 1370° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 75-85% solid glass density is obtained by this process.

[0256] Step 4.

[0257] The so formed vitrified tubular silica body is heated to a temperature of about 1360° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 65-75% fused silica density is obtained by this process.

[0258] Step 5.

[0259] The so formed vitrified tubular silica body is heated to a temperature of about 1330° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 50-60% fused silica density is obtained by this process.

[0260] Step 6.

[0261] The so formed vitrified tubular silica body is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0262] Step 7.

[0263] Introducing silicon tetra fluoride, SiF₄, through the porous substrate and the chamber into the deposited porous silica material for about 0.3-6 hours at temperature of about 1100° C.-1400° C., the silica material is doped. The amount of the SiF₄ penetrating the cladding will be proportional to the pore density and the exposure time at given temperature of the preform.

[0264] Step 8.

[0265] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate. The porous silica is vitrified and a tubular silica body having desired cladding layer wall thickness is formed.

[0266] Step 9.

[0267] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the inner diameter and the outside diameter of the tubing fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication doped tubing for fiber optic preforms that are up 12 inches or more in diameter and several meters in length. The radial distribution of the index of refraction in the cladding will depend on the thickness of the doped layer deposited and or the pore density in the as deposited preform.

Example No. 11 Doped Core Having Graded Index of Refraction for Fiber Optic Preform Fabrication

[0268] Step 1.

[0269] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica and dopant particle streams introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% solid glass density is obtained by this process.

[0270] Step 2.

[0271] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0272] Step 3.

[0273] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams and reduced concentration dopant particle stream introduced via ports on the chamber. The so accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0274] Step 4.

[0275] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0276] Step 5.

[0277] Rotating and translating, a substrate consisting of porous tubing is heated to a temperature of about 1300° C. and is subjected to plurality of silica particle streams and further reduced concentration dopant particle stream introduced via ports on the chamber. The accelerated particles collide with the substrate and deposit themselves on the substrate. Subsequent particles deposit on the material already deposited and layer by layer the silica member is formed. A porous silica body having about 25-35% fused silica density is obtained by this process.

[0278] Step 6.

[0279] The substrate and/or chamber temperature is raised to about 1400-1600° C. while rotating the substrate and maintained there for certain time interval. A vitrified tubular silica body having desired wall thickness is formed.

[0280] Step 7-9.

[0281] Repeat steps 4-6 further reducing the dopant levels in the deposited silica by further lowering the dopant concentrations in the dopant particle stream. Repeat until the desired index of refraction profile in radial direction is obtained.

[0282] Step 11.

[0283] The substrate is transferred out of the deposition chamber area and the substrate is removed. If wetting between the substrate and silica occurs, the substrate is heated to the softening point of the silica. The contact between the substrate and the silica member is melted and the substrate is removed.

[0284] Step 10.

[0285] The so formed silica member is collapsed and a solid rod like silica member is formed. Graded index of refraction core having desired diameter and length is formed. The duration of the silica deposition for certain substrate cross sections and sizes can be adjusted to allow for various ratios between the inner diameter and the outside diameter of the tubing fiber optic preform, e.g., 1:2, 1:3, 1:5, etc. The length of the chamber and the translation capabilities can provide basis for fabrication doped cores for fiber optic preforms that are up 12 inches or more in diameter and several meters in length. The radial distribution of the index of refraction in the cladding will depend on the thickness of the doped layer deposited and on the pore density in the deposited preform.

[0286] While the invention has been described with reference to specific embodiments, modifications and variations of the invention may be constructed without departing from the scope of the invention, which is defined in the following claims. 

I claim:
 1. Apparatus for making fused silica products, comprising a vacuum chamber, a support extending into the chamber, a first mover connected to the support for moving the first support with respect to the chamber, plural parallel substrates positioned in the chamber, second movers connected to the support and connected to the substrates for moving the substrates in the chamber with respect to each other, silica particle providers in the chamber for providing silica particles for depositing on the substrates, heaters in the chamber for heating the substrates and particles deposited thereon, thereby fusing particles on the substrates, wherein the heaters heat the fused particles and wherein other silica particles from the providers collect and stick on the particles and create preforms on the substrates.
 2. The apparatus of claim 1, wherein the substrates comprise long hollow porous tubular substrates, and wherein the first and second movers rotate the long hollow porous tubular substrates within the chamber.
 3. The apparatus of claim 2, wherein the heaters further comprise heaters within the hollow tubular substrates for heating the substrates.
 4. The apparatus of claim 1, further comprising valved vacuum, dopant gas and purge gas ports connected to the chamber.
 5. The apparatus of claim 1, wherein the substrates are hollow porous tubes, further comprising valved purge gas and dopant gas connections to the hollow porous tubes.
 6. The apparatus of claim 1, wherein the silica particle providers comprise burners mounted near walls of the chamber for pyrolysis of silicon compositions for generating silica powder.
 7. The apparatus of claim 1, wherein the silica particle providers comprise silica powder injectors near walls of the chamber.
 8. The apparatus of claim 1, wherein the second movers further comprise rotation and translation mechanisms connected to the support for rotating and translating the substrates in the chamber.
 9. The apparatus of claim 1, wherein the second movers further comprise independent adjustment and support mechanisms connected to the support which are connected to the rotation and translation mechanisms, and further comprising plural adjusters connected to the independent rotation and support mechanism for moving the plural substrates and rotating them with respect to each other as the independent rotation and translation mechanisms rotate and translate the substrates within the chamber.
 10. The apparatus of claim 1, further comprising heat controls connected to the heaters for increasing temperature within the chamber to vitrification temperatures for vitrifying and densifying the preforms in the chamber.
 11. The apparatus of claim 1, wherein the chamber, the substrates and the preforms are vertically oriented, and wherein the particle providers provide particles from cylindrical side areas of the chamber.
 12. The apparatus of claim 11, further comprising preform melting chamber below the preform forming chambers, and a movable shelf separating the preform forming chamber and the preform melting chamber, heaters adjacent the walls of the preform melting chamber and valved ports connected to the preform melting chamber for providing gas delivery, gas vent, vacuum and dopants, and wherein the heaters provide multiple heating zones in the chambers, and further comprising a rotating and pulling assembly connected to the preform melting chamber for withdrawing a fused silica member from the preform chamber.
 13. The apparatus of claim 12, further comprising a plasma surface removal unit positioned below the rotating and pulling assembly for finishing a surface of the fused silica member.
 14. The apparatus of claim 12, further comprising a plate and bar forming chamber having an input connected to the rotating and pulling assembly for withdrawing the fused silica member directly into the plate and bar forming chamber.
 15. A fused silica producing apparatus, comprising a fused silica chamber having silica particle providers connected thereto for providing silica particles within the chamber, heaters within the chamber for heating the particles and fusing the particles, a crucible within the chamber for collecting the heated and fused particles, heaters connected to the crucible for heating and fusing the silica particles in the crucible, a valved dopant gas supplier connected to the crucible for supplying dopant gas to fused particles within the crucible, a melting zone connected to the crucible for delivering molten fused silica from the crucible, a shaped body positioned below the melting zone for controlling molten fused silica flow, and a purge gas connection connected to the forming member for introducing a purge gas in a middle of the molten flow, a plate and bar forming chamber connected to an output of the fused silica chamber for directly receiving a fused silica output therefrom.
 16. The apparatus of claim 15, further comprising an electrical field generator having inner electrodes positioned beneath the forming body and outer electrodes positioned adjacent the flow for passing an electric field through the molten fused silica flow.
 17. The apparatus of claim 15, further comprising a second crucible positioned below the melting zone of the first crucible for receiving molten fused silica, and a valved dopant gas inlet connected to the second crucible for introducing dopant gas into molten fused silica in the second crucible.
 18. Quartz apparatus comprising a plate/bar fabrication vacuum chamber having a plurality of valved vacuum ports, gas inlet ports, vent ports, and a fused silica feed material introduction port, resistance or RF heating mounted in the chamber and connected to a power source through a plurality of feedthroughs, a crucible made from graphite, silicon carbide, ceramic material, metal or metal alloys for receiving the feed material from the introduction port, and for softening and solidifying the material, a plurality of ultrasound generators near the crucible for promoting proper mixing and outgassing of the material, and additional vacuum ports placed above the softened material in the crucible for removing any gas bubbles.
 19. The apparatus of claim 18, wherein the fabrication chamber comprises a plurality of chambers.
 20. A method of producing fused silica fiber optic preforms, comprising relatively rotating a plurality of substrates with respect to each other in a chamber, heating the chamber and the substrates, directing silica particles inward in the chamber toward the substrates, holding and fusing silica particles on the substrates, and sticking particles to particles held on the substrates and forming porous silica preforms on the substrates, and relatively moving the substrates and preforms with respect to the chamber.
 21. The method of claim 20, wherein the directing the silica particles comprise generating silica particles with pyrolysis of silica particle precursors from wall-mounted burners.
 22. The method of claim 20, further comprising directing silica particle streams toward the substrates and preforms.
 23. The method of claim 22, further comprising providing dopant gases to the chamber and through the substrate, and providing purge gas to the chamber and through the substrate, and venting and removing gases from the chamber.
 24. The method of claim 20, wherein the moving comprises relatively rotating and translating the substrates and preforms within the chamber.
 25. The method of claim 20, further comprising stopping the particles, increasing heat on the preforms, and densifying and vitrifying the preforms.
 26. The method of claim 25, further comprising depositing second layers of fused silica on the densified for vitrified silica preform.
 27. The method of claim 20, further comprising a doped or undoped silica core on the substrate for depositing a doped or undoped cladding layer on the silica core.
 28. An apparatus for forming a fused silica member, comprising an elongated chamber, having a pressure control connected to the chamber, controlling pressure in the chamber, at least one collector in the chamber, silica particle providers in the chamber for supplying silica particles in the chamber and for directing the silica particles toward the collector.
 29. The apparatus of claim 28, wherein the collector comprises at least one substrate in the chamber, a rotation assembly mounted on the chamber and connected to the at least one substrate for relatively rotating the substrate with respect to the chamber, at least one heater connected to the chamber for supplying heat to the collector and to the chamber for directing heat to the silica particles for softening surfaces of the particles, sticking the heated particles to the substrate and forming a porous preform of particles around the substrate and for sticking the heated particles to particles on a surface of the preform.
 30. The apparatus of claim 29, wherein the pressure control comprises at least one reduced pressure port in the chamber for venting and withdrawing gas.
 31. The apparatus of claim 30, further comprising at least one inlet port in the chamber for introducing purgant, dopant or oxidant gas into the chamber.
 32. The apparatus of claim 28, wherein the substrate comprises a hollow and porous substrate, and further comprising a substrate gas inlet connected to the substrate, for introducing purgant or dopant gas into the substrate for flowing the gas out through the porous substrate and through the preform on the substrate.
 33. The apparatus of claim 30, wherein at least one heater comprises at least one radiant heater in the chamber for directing heat to the substrate, the preform and the silica particles in the chamber.
 34. The apparatus of claim 29, wherein at least one heater comprises a radio frequency heater in the chamber, for directing heat to the substrate, the preform and the particles in the chamber.
 35. The apparatus of claim 29, wherein at least one heater comprises a substrate heater connected to the substrate.
 36. The apparatus of claim 29, wherein at least one heater comprises plural heaters in the chamber for heating plural heat zones along the elongated chamber.
 37. The apparatus of claim 29, further comprising a translation mechanism connected to the chamber and the substrate for relatively translating the substrate with respect to the chamber.
 38. The apparatus of claim 29, wherein at least one substrate comprises plural parallel substrates mounted in the cylinder, and wherein the rotation assembly further comprises multiple rotator connectors for relatively rotating the substrates with respect to each other substrate.
 39. The apparatus of claim 29, wherein the silica particle providers comprise burners for introducing and pyrolyzing compounds in the chamber for the silica particles in the chamber.
 40. The apparatus of claim 29, wherein the silica particle providers comprise providing silica powder stream injectors in the chamber for directing preformed silica powder toward the substrate and preform.
 41. The apparatus of claim 29, wherein the elongated chamber comprises a vertical elongated chamber, and wherein the at least one substrate is vertical within the chamber.
 42. The apparatus of claim 41, wherein the rotation assembly further comprises a substrate support at a top of the chamber, and wherein at least one heater further comprises at least one heater for providing increased heat near a bottom of the chamber for softening and flowing fused silica from the preform.
 43. The apparatus of claim 42, wherein at least one substrate further comprises an enlarged lower end for flowing softened fused silica from an outer surface of the preform around the enlarged lower end.
 44. The apparatus of claim 42, further comprising a rotating and pulling mechanism near a lower end of the chamber for rotating and pulling the softened fused silica from the chamber.
 45. The apparatus of claim 44, wherein the softened and fused silica is pulled from the chamber as a tube.
 46. The apparatus of claim 44, wherein the softened and fused silica is pulled from the chamber as a rod.
 47. The apparatus of claim 44, wherein at least one heater further comprises a resistance heater connected to the substrate for softening fused silica in the preform adjacent the substrate.
 48. The apparatus of claim 43, further comprising at least one divider partially extended across the chamber toward the substrate and the preform for separating an upper part of the chamber from a lower part of the chamber.
 49. The apparatus of claim 43, wherein the divider is adjustable.
 50. The apparatus of claim 43, wherein the divider is adjustable in extension outward and across the chamber.
 51. The apparatus of claim 48, wherein the divider is adjustable upward and downward along the chamber.
 52. The apparatus of claim 48, further comprising a first gas vent, a first vacuum port and a first dopant inlet connected to the chamber above the divider.
 53. The apparatus of claim 52, further comprising a gas delivery system, a second gas vent, a second vacuum port and a second dopant inlet connected to the chamber below the divider.
 54. The apparatus of claim 48, wherein the divider is movable between opened and closed positions and extends inward to near the substrate in the closed position, wherein the silica powder providers are positioned above the divider for growing the preform above the divider, wherein the at least one heater comprises at least one heater for increasing heating of the substrate above the divider, and wherein the divider in the opened position allows passage of the preform through the divider, whereby when the divider is moved to the opened position and the at least one heater increases temperature of the substrate above the divider, a portion of the preform near the substrate softens, allowing the preform to slide downward on the substrate and moving the preform from the upper part of the chamber to the lower part of the chamber.
 55. The apparatus of claim 44, further comprising electrodes near the softened silica, an electric field generator connected to the electrodes, and an electric field in the softened silica.
 56. The apparatus of claim 55, further comprising at least one of the electrodes on one side of the softened silica, at least one other of the electrodes on an opposite side of the softened silica, and the electric field through the softened silica.
 57. The apparatus of claim 56, wherein the flowing of the softened silica from the preform comprises forming a tubular bubble and the at least one of the electrodes positioned outside of the tubular bubble, and the at least one other of the electrodes positioned within the tubular bubble.
 58. The apparatus of claim 57, wherein the electrodes comprises concentric ring electrodes.
 59. The apparatus of claim 42, further comprising a second chamber having a crucible tray for receiving the softened silica from the first chamber in the crucible tray, and heaters in the second chamber for heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 60. The apparatus of claim 59, further comprising ultrasound generators in the second chamber adjacent the crucible tray for outgassing gas from the softened reformed fused silica.
 61. The apparatus of claim 60, further comprising additional vacuum ports near the crucible tray for removing gases outgassed from the softened reformed fused silica.
 62. The apparatus of claim 28, wherein the silica particle providers are positioned in an upper part of the chamber for directing particles inward into a mass of particles, providing resistive, radio frequency, plasma or other heaters, heating particles and softening surfaces of the particles in the mass, and wherein the at least one collector comprises a first heated crucible positioned with respect to the mass of particles for collecting softened particles and agglomerations of softened surface particles in the first heated crucible, a lower heated throat on the first crucible, with a heater on the throat for softening, fusing and flowing fused silica from the first crucible.
 63. The apparatus of claim 62, further comprising a flow director mounted beneath the lower heated throat, for directing flow of the flowing fused silica as a tubular or solid member having round, rectangular or polygonal cross-section.
 64. The apparatus of claim 63, further comprising a dopant injector connected to the flow director for supplying dopant to the flowing fused silica.
 65. The apparatus of claim 64, further comprising a second crucible positioned below the heated throat, for receiving flowing fused silica, and a dopant injector in the second crucible for injecting dopant in the fused silica in the second crucible.
 66. The apparatus of claim 64, further comprising a second chamber, a crucible tray in the second chamber, for receiving the softened silica from the first chamber in the crucible tray, a heater in the second chamber for heating the fused softened silica and for reforming the silica in a desired form in the crucible tray.
 67. The apparatus of claim 66, further comprising ultrasound generators in the second chamber adjacent the crucible tray for outgassing gas from the softened reformed fused silica.
 68. The apparatus of claim 67, further comprising additional vacuum ports near the crucible tray for removing gases outgassed from the softened reformed fused silica through the additional vacuum ports.
 69. Apparatus for forming a fused silica member, comprising an elongated chamber, a pressure control connected to the chamber, controlling pressure in the chamber, at least one collector mounted in the chamber, silica particle providers connected to the chamber for supplying silica particles in the chamber and directing the silica particles toward the collector, at least one heater connected to the chamber for supplying heat to the collector and to the chamber and for directing heat to the silica particles for softening surfaces of the particles for sticking the particles on heated particles to the collector forming a porous preform on the collector and sticking the heated particles to a surface of the preform for collecting the particles with softened surfaces with the collector.
 70. The apparatus of claim 69, wherein the collector comprises at least one substrate in the chamber, a rotation assembly mounted on the chamber and connected to the at least one substrate for relatively rotating the substrate with respect to the chamber.
 71. The apparatus of claim 70, wherein the pressure control comprises at least one reduced pressure port in the chamber and venting and withdrawing gas.
 72. The apparatus of claim 70, further comprising at least one inlet port in the chamber for introducing purgant, dopant or oxidant gas into the chamber.
 73. The apparatus of claim 70, wherein the substrate is hollow and porous, and further comprising a substrate gas inlet connected to the substrate for introducing purgant or dopant gas into the substrate and flowing the gas out through the porous substrate and through the preform on the substrate.
 74. The apparatus of claim 70, wherein the at least one heater comprises at least one radiant heater in the chamber for directing heat to the substrate, the preform and the silica particles in the chamber.
 75. The apparatus of claim 70, wherein the at least one heater comprises a radio frequency heater in the chamber for directing heat to the substrate, the preform and the particles in the chamber.
 76. The apparatus of claim 70, wherein the at least one heater comprises a substrate heater connected to the substrate.
 77. The apparatus of claim 70, wherein the at least one heater comprises plural heaters in the chamber for heating and forming plural heat zones along the elongated chamber.
 78. The apparatus of claim 70, further comprising a translation mechanism connected to the chamber and the substrate for relatively translating the substrate with respect to the chamber.
 79. The apparatus of claim 70, wherein the at least one substrate comprises plural parallel substrates mounted in the chamber, and wherein the rotation assembly further comprises multiple rotator connectors for relatively rotating the substrates with respect to each other substrate.
 80. The apparatus of claim 70, wherein the silica particle providers comprise burners for introducing and pyrolyzing compounds in the chamber for providing the silica particles in the chamber.
 81. The apparatus of claim 70, wherein the silica particle providers comprise silica powder stream injectors in the chamber for directing preformed silica powder toward the substrate and preform.
 82. The apparatus of claim 70, wherein the elongated chamber is vertical and the at least one substrate is vertical within the chamber.
 83. The apparatus of claim 82, wherein the rotation assembly further comprises a substrate support at a top of the chamber, and wherein the at least one heater further comprises at least one heater for providing increased heat near a bottom of the chamber for softening and flowing fused silica from the preform.
 84. The apparatus of claim 83, wherein the substrate further comprises an enlarged lower end for flowing softened fused silica from an outer surface of the preform.
 85. The apparatus of claim 83, further comprising a rotating and pulling mechanism near a lower end of the chamber for rotating and pulling the softened fused silica from the chamber.
 86. The apparatus of claim 85, wherein the softened and fused silica is pulled from the chamber as a tube.
 87. The apparatus of claim 85, wherein the softened and fused silica is pulled from the chamber as a rod.
 88. The apparatus of claim 85, wherein the at least one heater further comprises a resistance heater connected to the substrate for softening fused silica in the preform adjacent the substrate.
 89. The apparatus of claim 85, further comprising at least one divider partially extending across the chamber toward the substrate and the preform for separating an upper part of the chamber from a lower part of the chamber.
 90. The apparatus of claim 89, wherein the divider is adjustable in and out across the chamber.
 91. The apparatus of claim 89, wherein the divider is adjustable upward and downward along the chamber.
 92. The apparatus of claim 89, further comprising a first gas vent, a first vacuum port and a first dopant inlet connected to the chamber above the divider.
 93. The apparatus of claim 92, further comprising a gas delivery system, a second gas vent, a second vacuum port and a second dopant inlet connected to the chamber below the divider.
 94. The apparatus of claim 93, wherein the divider is movable between opened and closed positions and extends inward to near the substrate in the closed position, wherein the silica powder providers are positioned above the divider for growing the preform above the divider, wherein the at least one heater comprises at least one heater for increasing heating of the substrate above the divider, and wherein the divider in the opened position allows passage of the preform through the divider, whereby when the divider is moved to the opened position and the at least one heater increases temperature of the substrate above the divider, a portion of the preform near the substrate softens, allowing the preform to slide downward on the substrate for moving the preform from the upper part of the chamber to the lower part of the chamber.
 95. The apparatus of claim 83, further comprising electrodes near the softened silica and an electric field generator connected to the electrodes for providing an electric field in the softened silica.
 96. The apparatus of claim 95, wherein at least one of the electrodes is on one side of the softened silica, and wherein at least one other of the electrodes is on an opposite side of the softened silica for providing an electric field through the softened silica.
 97. The apparatus of claim 96, wherein the softened silica flowing from the preform forms a tubular bubble, wherein the at least one of the electrodes is outside of the tubular bubble, and wherein the at least one other of the electrodes is within the tubular bubble.
 98. The apparatus of claim 97, wherein the electrodes are concentric ring electrodes.
 99. The apparatus of claim 85, further comprising a second chamber having a crucible tray for receiving the softened silica from the first chamber, and at least one second chamber heater in the second chamber for heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 100. The apparatus of claim 99, further comprising ultrasound generators in the second chamber adjacent the crucible tray for outgassing gas from the softened reformed fused silica.
 101. The apparatus of claim 100, further comprising additional vacuum ports near the crucible tray for removing gases outgassed from the softened reformed fused silica.
 102. The apparatus of claim 28, wherein the particle providers are positioned in an upper part of the chamber and are oriented for directing particles inward into a mass of particles, and wherein the at least one heater comprises a resistive, radio frequency, plasma or other heater for heating particles and softening surfaces of the particles in the mass of particles, and wherein the collector comprises a first heated crucible positioned with respect to the mass of particles for collecting softened particles and agglomerations of softened surface particles from the mass, the first heated crucible having a lower heated throat on the first crucible, with a heater on the throat for softening, fusing and flowing fused silica from the first crucible, a second chamber having a crucible tray for receiving the softened silica from the first chamber, and at least one second chamber heater in the second chamber for heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 103. The apparatus of claim 102, further comprising a flow director mounted beneath the lower heated throat for directing flow of the flowing fused silica as a tubular or solid member having round, rectangular or polygonal cross-section.
 104. The apparatus of claim 103, further comprising a dopant injector connected to the flow director for supplying dopant to the flowing fused silica.
 105. The apparatus of claim 104, further comprising a second crucible positioned below the heated throat for receiving flowing fused silica, and a dopant injector in the second crucible for injecting dopant in the fused silica in the second crucible.
 106. The apparatus of claim 105, further comprising a second heated throat on the second crucible for flowing fused silica out of the second crucible into the second chamber.
 107. The apparatus of claim 102, further comprising ultrasound generators in the second chamber adjacent the crucible tray for outgassing gas from the softened reformed fused silica.
 108. The apparatus of claim 107, further comprising additional vacuum ports near the crucible tray for removing gases outgassed from the softened reformed fused silica.
 109. Method for making fused silica products, comprising providing a chamber, providing plural parallel substrates positioned in the chamber, providing a support, providing first movers on the support connecting the first movers to the substrates, moving the substrates with respect to each other, providing a second mover connected to a support for the first movers for moving the first mover with respect to the chamber, disposing silica particle providers in the chamber for providing silica particles which deposit on the substrates, providing heaters in the chamber, heating the substrates and the particles, softening and agglomerating surfaces of the particles and sticking the particles on the substrates and on particles stuck to the substrates and creating preforms of the particles on the substrates.
 110. The method of claim 109, wherein providing the substrates comprises providing long hollow tubular substrates, and wherein the first and second movers rotate the long hollow tubular substrates within the chamber.
 111. The method of claim 11 0, wherein providing the heater further comprise providing a heater within the hollow tubular substrates and heating the substrates from within.
 112. The method of claim 110, further comprising connecting valved purged gas and dopant gas to the hollow tubular substrates.
 113. The method of claim 109, further comprising connecting valved vacuum, dopant gas and purge gas ports to the chamber.
 114. The method of claim 109, wherein providing the silica particle providers comprises providing burners mounted near walls of the chamber and pyrolyzing silicon compositions and generating silica powder.
 115. The method of claim 109, wherein providing the silica particle providers comprises providing silica powder injectors near walls of the chamber.
 116. The method of claim 109, wherein providing the second movers further comprise providing rotation and translation mechanisms connected to the support and rotating and translating the substrates in the chamber.
 117. The method of claim 109, wherein providing the first mover further comprises providing independent adjustment and support mechanisms connected to the support which is connected to the rotation and translation mechanisms, and further comprising providing plural adjusters connected to the independent rotation and support mechanisms and moving the plural substrates and rotating them with respect to each other as the independent rotation and support mechanisms rotate and translate the substrates within the chamber.
 118. The method of claim 109, further comprising providing heat controls connected to the heaters and increasing temperature within the chamber to vitrification temperatures and vitrifying and densifying the preforms in the chamber.
 119. The method of claim 109, wherein the chamber, the at least one substrate and the preform are vertically oriented, and wherein the particle providers provide particles from cylindrical side areas of the chamber.
 120. The method of claim 119, further comprising the providing a preform melting chamber below the preform forming chamber, and providing a movable shelf separating the preform forming chamber and the preform melting chamber, providing heaters adjacent walls of the preform melting chamber and providing valved ports connected to the preform melting chamber for providing gas delivery, gas venting, vacuum and dopants, and providing multiple heating zones in the chambers, and further comprising providing a rotating and pulling assembly connected to the preform melting chamber and withdrawing a fused silica member from the preform chamber.
 121. The method of claim 120, further comprising providing a plasma surface removal unit positioned below the rotating and pulling assembly and finishing a surface of the fused silica member.
 122. The method of claim 120, further comprising providing a plate and bar forming chamber, providing an input connected to the rotating and pulling assembly and withdrawing the fused silica member directly into the plate and bar forming chamber.
 123. A fused silica producing method, comprising providing a fused silica chamber providing silica particle providers connected thereto and providing silica particles within the chamber, providing heaters within the chamber heating the particles and fusing the particles, providing a crucible within the chamber, collecting the heated and fused particles in the crucible, providing heaters connected to the crucible, heating and fusing the silica particles in the crucible, providing a valved dopant gas supplier connected to the crucible and supplying dopant gas to fused particles within the crucible, providing a melting zone connected to the crucible for delivering molten fused silica from the crucible, providing a forming member positioned below the melting zone, controlling flow of the molten fused silica over the forming member, and providing a purge gas connection to the forming member and introducing a purge gas in a middle of the molten flow, connecting a plate and bar forming chamber to an output of the fused silica chamber and directly receiving a fused silica output there from.
 124. The method of claim 123, further comprising providing an electrical field generator, providing inner electrodes positioned beneath the forming body and outer electrodes positioned adjacent the flow and passing an electric field through the molten fused silica.
 125. The method of claim 123, further comprising providing a second crucible positioned below the melting zone of the first crucible and receiving molten fused silica, providing a valved dopant gas inlet connected to the second crucible and introducing dopant gas into molten fused silica in the second crucible.
 126. A quartz member production method comprising providing a plate/bar fabrication vacuum chamber providing a plurality of valved vacuum ports, gas inlet ports, vent ports, and a fused silica feed material introduction port, providing resistance or RF heating from heaters connected through a plurality of feedthroughs, providing a crucible made from graphite, silicon carbide, ceramic material, metal or metal alloys, receiving the feed material from the feed port, softening and solidifying the material, providing a plurality of ultrasound generators in contact with the crucible, promoting proper mixing and outgassing of the material, providing additional vacuum ports placed above the softened material and removing any gas bubbles.
 127. The method of claim 126, wherein providing the fabrication chamber provides a plurality of chambers.
 128. A method of producing fused silica fiber optic preforms, comprising providing a chamber, providing a plurality of substrates within the chamber, relatively rotating the plurality of substrates with respect to each other in the chamber, heating the chamber and the substrates, directing silica particles inward in the chamber toward the substrates, fusing silica particles on the substrates, and sticking particles to particles held on the substrates and forming porous silica preforms on the substrates, and relatively moving the substrates and preforms in the chamber.
 129. The method of claim 128, wherein the providing of silica particles comprises generating silica particles with pyrolysis of silica particle precursors from wall-mounted burners.
 130. The method of claim 128, wherein the providing of silica particles further comprises providing silica particle streams toward the substrate and preform.
 131. The method of claim 130, further comprising providing dopant gases to the chamber and through the substrate, and providing purge gas to the chamber and through the substrate, and venting and removing gases from the chamber.
 132. The method of claim 128, wherein the moving comprises relatively rotating and translating the substrates and preforms within the chamber.
 133. The method of claim 128, further comprising stopping the providing of particles, increasing heat on the preforms, and densifying and vitrifying the preforms.
 134. The method of claim 133, further comprising depositing second layers of fused silica on the densified and vitrified silica preforms.
 135. The method of claim 128, further comprising providing doped or undoped silica cores on the substrates and depositing doped or undoped cladding layers on the silica cores.
 136. A method for forming a fused silica member, comprising providing an elongated chamber, providing a pressure control connected to the chamber, controlling pressure in the chamber, providing at least one collector in the chamber, providing silica particle providers in the chamber, supplying silica particles in the chamber and directing the silica particles toward the collector.
 137. The method of claim 136, wherein the providing of the collector comprises providing at least one substrate in the chamber, providing at least one heater connected to the chamber for supplying heat to the substrate and to the chamber and for directing heat to silica particles for softening surfaces of the particles, providing a rotation assembly mounted on the chamber and connected to the at least one substrate, relatively rotating the substrate with respect to the chamber, sticking the heated particles to the substrate, forming a porous preform around the substrate and sticking the heated particles to a surface of the preform.
 138. The method of claim 137, wherein the providing of the pressure control comprises providing at least one reduced pressure port in the chamber and venting and withdrawing gas.
 139. The method of claim 138, further comprising at least one inlet port in the chamber and introducing purgant, dopant or oxidant gas into the chamber.
 140. The method of claim 139, wherein the providing of the substrate comprises providing a hollow and porous substrate, and further comprising providing a substrate gas inlet connected to the substrate, and introducing purgant or dopant gas into the substrate and flowing the gas out through the porous substrate and through the preform on the substrate.
 141. The method of claim 137, wherein the providing of at least one heater comprises providing at least one radiant heater in the chamber and directing heat to the substrate, the preform and the silica particles in the chamber.
 142. The method of claim 137, wherein the providing of at least one heater comprises providing a radio frequency heater in the chamber, and directing heat to the substrate, the preform and the particles in the chamber.
 143. The method of claim 137, wherein the providing of at least one heater comprises connecting a substrate heater to the substrate.
 144. The method of claim 137, wherein the providing of at least one heater comprises providing plural heaters in the chamber and heating plural heat zones along the elongated chamber.
 145. The method of claim 137, further comprising providing a translation mechanism connected to the chamber and the substrate and relatively translating the substrate with respect to the chamber.
 146. The method of claim 137, wherein the providing of at least one substrate comprises providing plural parallel substrates mounted in the chamber, and wherein the providing rotation assembly further comprises multiple rotator connectors and relatively rotating the substrates with respect to each other substrate.
 147. The method of claim 137, wherein the providing of silica particle providers comprises providing burners, introducing and pyrolyzing compounds in the chamber, and providing the silica particles in the chamber.
 148. The method of claim 137, wherein the providing of silica particle providers comprises providing silica powder stream injectors in the chamber and directing preformed silica powder toward the substrate and preform.
 149. The method of claim 137, wherein the providing of the elongated chamber comprises providing a vertical elongated chamber and providing the at least one substrate comprises providing a vertical substrate within the chamber.
 150. The method of claim 149, wherein the providing of the rotation assembly further comprises providing a substrate support at a top of the chamber, and wherein the providing of at least one heater further comprises providing at least one heater for providing increased heat near a bottom of the chamber, and softening and flowing fused silica from the preform.
 151. The method of claim 150, wherein the providing of at least one substrate further comprises providing an enlarged lower end and flowing softened fused silica from an outer surface of the preform and around the enlarged lower end.
 152. The method of claim 150, further comprising providing a rotating and pulling mechanism near a lower end of the chamber, and rotating and pulling the softened fused silica from the chamber.
 153. The method of claim 152, wherein the softened and fused silica is pulled from the chamber as a tube.
 154. The method of claim 152, wherein the softened and fused silica is pulled from the chamber as a rod.
 155. The method of claim 152, wherein providing the at least one heater further comprises providing a resistance heater connected to the substrate and softening fused silica in the preform adjacent the substrate.
 156. The method of claim 150, further comprising providing at least one divider partially extending across the chamber toward the substrate and the preform and separating an upper part of the chamber from a lower part of the chamber.
 157. The method of claim 156, further comprising adjusting the divider.
 158. The method of claim 156, further comprising adjusting the divider in and out across the chamber.
 159. The method of claim 156, further comprising adjusting the divider upward and downward along the chamber.
 160. The method of claim 156, further comprising providing a first gas vent, providing a first vacuum port and providing a first dopant inlet connected to the chamber above the divider.
 161. The method of claim 160, further comprising providing a gas delivery system, providing a second gas vent, providing a second vacuum port and providing a second dopant inlet connected to the chamber below the divider.
 162. The method of claim 158, further comprising moving the divider between opened and closed positions and extending the divider inward to near the substrate in the closed position, wherein the silica powder providers are positioned above the divider, growing the preform above the divider, wherein the providing of at least one heater comprises providing at least one heater for increasing heating of the substrate above the divider, and wherein the divider in the opened position allows passage of the preform through the divider, whereby when the divider is moved to the opened position and the at least one heater increases temperature of the substrate above the divider, a portion of the preform near the substrate softens, allowing the preform to slide downward on the substrate and moving the preform from the upper part of the chamber to the lower part of the chamber.
 163. The method of claim 151, further comprising providing electrodes near the softened silica, providing an electric field generator connected to the electrodes, and providing an electric field in the softened silica.
 164. The method of claim 163, further comprising providing at least one of the electrodes on one side of the softened silica, providing at least one other of the electrodes on an opposite side of the softened silica, and providing the electric field through the softened silica.
 165. The method of claim 163, wherein the flowing of the softened silica from the preform comprises forming a tubular bubble and the providing the electrodes comprises providing the at least one of the electrodes outside of the tubular bubble, and providing the at least one other of the electrodes within the tubular bubble.
 166. The method of claim 164, wherein the providing of electrodes comprises providing concentric ring electrodes.
 167. The method of claim 151, further comprising providing a second chamber having a crucible tray, receiving the softened silica from the first chamber in the in the crucible tray, and heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 168. The method of claim 167, further comprising providing ultrasound generators in the second chamber adjacent the crucible tray and outgassing gas from the softened reformed fused silica.
 169. The method of claim 168, further comprising providing additional vacuum ports near the crucible tray and removing gases outgassed from the softened reformed fused silica.
 170. The method of claim 136, wherein the providing of silica particle providers comprises providing the streams in an upper part of the chamber and directing particles inward into a mass of particles, providing resistive, radio frequency, plasma or other heaters, heating particles and softening surfaces of the particles in the mass, and wherein the providing of at least one collector comprises providing a first heated crucible positioned with respect to the mass of particles, collecting softened particles and agglomerations of softened particles in the first heated crucible, providing a lower throat with a heater, and softening, fusing and flowing fused silica from the first crucible.
 171. The method of claim 170, further comprising providing a flow director mounted beneath the lower heated throat, and directing flow of the flowing fused silica as a tubular or solid member having round, rectangular or polygonal cross-section.
 172. The method of claim 171, further comprising connecting a dopant injector to the flow director and supplying dopant to the flowing fused silica.
 173. The method of claim 172, further comprising providing a second crucible positioned below the heated throat, receiving flowing fused silica, providing a dopant injector in the second crucible, and injecting dopant in the fused silica in the second crucible.
 174. The method of claim 173, further comprising providing a second chamber, providing a crucible tray in the second chamber, receiving the softened silica from the first chamber in the crucible tray, heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 175. The method of claim 174, further comprising providing ultrasound generators in the second chamber adjacent the crucible tray and outgassing gas from the softened reformed fused silica.
 176. The method of claim 175, further comprising providing additional vacuum ports near the crucible tray and removing gases outgassed from the softened reformed fused silica through the additional vacuum ports.
 177. A method for forming a fused silica member, comprising providing of an elongated chamber, providing a pressure control connected to the chamber, and controlling pressure in the chamber, providing at least one collector mounted in the chamber, providing silica particle providers connected to the chamber and supplying silica particles in the chamber and directing the silica particles toward the collector, providing at least one heater connected to the chamber and supplying heat to the collector, to the chamber and to the silica particles, softening surfaces of the particles and sticking the particles on the substrate and on heated particles on the substrate, forming a porous preform around the substrate and sticking the heated particles to a surface of the preform and thereby collecting the particles with softened surfaces with the collector.
 178. The method of claim 177, wherein providing the collector comprises providing at least one substrate in the chamber, providing a rotation assembly mounted on the chamber and providing connection to the at least one substrate and relatively rotating the substrate with respect to the chamber.
 179. The method of claim 178 wherein providing the pressure control comprises providing at least one reduced pressure port in the chamber and venting and withdrawing gas.
 180. The method of claim 178, further comprising providing the at least one inlet port in the chamber and introducing purgant, dopant or oxidant gas into the chamber.
 181. The method of claim 178, wherein providing the substrate comprises providing at least one hollow and porous substrate, and further comprising connecting a substrate gas inlet to the substrate and introducing purgant or dopant gas into the substrate and flowing the gas out through the porous substrate and through the preform on the substrate.
 182. The method of claim 178, wherein providing the at least one heater comprises providing at least one radiant heater in the chamber and directing heat to the substrate, the preform and the silica particles in the chamber.
 183. The method of claim 178, wherein the providing of at least one heater comprises providing a radio frequency heater in the chamber and directing heat to the substrate, the preform and the particles in the chamber.
 184. The method of claim 178, wherein providing the at least one heater comprises connecting a substrate heater to the substrate.
 185. The method of claim 178, wherein providing the at least one heater comprises providing plural heaters in the chamber and heating plural heat zones along the elongated chamber.
 186. The method of claim 178, further comprising connecting a translation mechanism to the chamber and the substrate and relatively translating the substrate with respect to the chamber.
 187. The method of claim 178, wherein providing the at least one substrate comprises providing plural parallel substrates mounted in the chamber, and wherein providing the rotation assembly further comprises providing multiple rotator connectors and relatively rotating the substrates with respect to each other substrate.
 188. The method of claim 178, wherein providing the silica particle providers comprise providing burners for introducing and pyrolyzing compounds in the chamber and thereby providing the silica particles in the chamber.
 189. The method of claim 178, wherein providing the silica particle providers comprise providing silica powder stream injectors in the chamber and directing preformed silica powder toward the substrate and preform.
 190. The method of claim 178, wherein the elongated chamber is vertical and the at least one substrate is vertical within the chamber.
 191. The method of claim 190, wherein providing the rotation assembly further comprises providing a substrate support at a top of the chamber, and wherein providing the at least one heater further comprises providing at least one heater for providing increased heat near a bottom of the chamber and softening and flowing fused silica from the preform.
 192. The method of claim 191, wherein providing the substrate further comprises providing an enlarged lower end and flowing softened fused silica from an outer surface of the preform.
 193. The method of claim 190, further comprising providing a rotating and pulling mechanism near a lower end of the chamber and rotating and pulling the softened fused silica from the chamber.
 194. The method of claim 193, wherein the pulling the softened and fused silica from the chamber comprises pulling the silica as a tube.
 195. The method of claim 193, wherein the pulling the softened and fused silica from the chamber comprises pulling the silica as a rod.
 196. The method of claim 193, wherein providing the at least one heater further comprises providing a resistance heater connected to the substrate and softening fused silica in the preform adjacent the substrate.
 197. The method of claim 193 further comprising providing at least one divider partially extended across the chamber toward the substrate and the preform and separating an upper part of the chamber from a lower part of the chamber.
 198. The method of claim 197, further comprising adjusting the divider in and out across the chamber.
 199. The method of claim 197, further comprising adjusting the divider upward and downward along the chamber.
 200. The method of claim 197, further comprising providing a first gas vent, a first vacuum port and a first dopant inlet connected to the chamber above the divider.
 201. The method of claim 200, further comprising providing a gas delivery system, a second gas vent, a second vacuum port and a second dopant inlet connected to the chamber below the divider.
 202. The method of claim 201, further comprising moving the divider between opened and closed positions and extending the divider inward to near the substrate in the closed position, wherein the silica powder providers are positioned above the divider and growing the preform occurs above the divider, wherein providing the at least one heater comprises providing at least one heater for increasing heating of the substrate above the divider, and wherein moving the divider to the opened position allows passage of the preform through the divider, whereby when the divider moves to the opened position and the at least one heater increases temperature of the substrate above the divider, a portion of the preform near the substrate softens, allowing the preform to slide downward on the substrate, moving the preform from the upper part of the chamber to the lower part of the chamber.
 203. The method of claim 193, further comprising providing electrodes near the softened silica and connecting an electric field generator to the electrodes and providing an electric field in the softened silica.
 204. The method of claim 203, further comprising providing at least one of the electrodes on one side of the softened silica, and providing at least one other of the electrodes on an opposite side of the softened silica and providing an electric field through the softened silica.
 205. The method of claim 204, wherein flowing the softened silica from the preform comprises forming a tubular bubble, and providing the at least one of the electrodes outside of the tubular bubble, and providing the at least one other of the electrodes within the tubular bubble.
 206. The method of claim 205, wherein providing the electrodes comprise providing concentric ring electrodes.
 207. The method of claim 193, further comprising providing a second chamber providing a crucible tray and receiving the softened silica from the first chamber in the crucible tray, and providing at least one second chamber heater in the second chamber and heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 208. The method of claim 207, further comprising providing ultrasound generators in the second chamber adjacent the crucible tray and outgassing gas from the softened reformed fused silica.
 209. The method of claim 208, further comprising providing additional vacuum ports near the crucible tray and removing gases outgassed from the softened reformed fused silica.
 210. The method of claim 136, wherein providing the particle providers is in an upper part of the chamber directing the particles inward into a mass of the particles, and wherein providing the at least one heater comprises providing a resistive, radio frequency, plasma or other heater and heating particles and softening surfaces of the particles in the mass of particles, and wherein providing the collector comprises providing a first heated crucible positioned with respect to the mass of particles and collecting softened particles and agglomerations of softened particles from the mass, the first heated crucible having a lower throat with a heater for softening, fusing and flowing fused silica from the first crucible.
 211. The method of claim 210, further comprising providing a flow director mounted beneath the lower throat and directing of flow of the flowing fused silica as a tubular or solid member having round, rectangular or polygonal cross-section.
 212. The method of claim 211, further comprising connecting a dopant injector to the flow director and supplying dopant to the flowing fused silica.
 213. The method of claim 212, further comprising providing a second crucible positioned below the heated throat and receiving flowing fused silica in the second crucible, a dopant providing injector in the second crucible and injecting dopant in the fused silica in the second crucible.
 214. The method of claim 210, further comprising providing a second chamber having a crucible tray and receiving in the tray the softened silica from the first chamber, providing at least one second chamber heater in the second chamber and heating the fused softened silica and reforming the silica in a desired form in the crucible tray.
 215. The method of claim 214, further comprising providing ultrasound generators in the second chamber adjacent the crucible tray and outgassing gas from the softened reformed fused silica.
 216. The method of claim 215, further comprising providing additional vacuum ports near the crucible tray and removing gases outgassed from the softened reformed fused silica.
 217. The apparatus of claim 1, wherein the substrates comprise long hollow porous tubes.
 218. The apparatus of claim 1, wherein the substrate is a hollow porous tube and the substrate heater is a hollow porous tube made from same material.
 219. The apparatus of claim 1, wherein the substrate is a hollow porous tube and the substrate heater is a hollow porous tube made from different material.
 220. The apparatus of claim 1, wherein the substrate is a hollow porous tube made from silica, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 221. The apparatus of claim 1, wherein the substrate is a hollow tube made form silica, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 222. The apparatus of claim 1, wherein the substrate is a hollow porous tube of undoped synthetic fused silica or natural quartz.
 223. The apparatus of claim 1, wherein the substrate is a hollow porous tube of doped synthetic fused silica or natural quartz.
 224. The apparatus of claim 1, wherein the substrate is a non-hollow porous tube of doped synthetic fused silica or natural quartz.
 225. The apparatus of claim 1, wherein the substrate is a non-hollow porous tube of undoped synthetic fused silica or natural quartz.
 226. The apparatus of claim 1, wherein the substrate is a porous rod of undoped synthetic fused silica or natural quartz.
 227. The apparatus of claim 1, wherein the substrate is a porous rod of doped synthetic fused silica or natural quartz.
 228. The apparatus of claim 1, wherein the substrate is a non-porous rod of doped synthetic fused silica or natural quartz.
 229. The apparatus of claim 1, wherein the substrate is a porous rod of undoped synthetic fused silica or natural quartz.
 230. The apparatus of claim 1, wherein the substrate heater is a hollow porous or non porous tube made from doped or undoped synthetic fused silica or natural quartz, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 231. A hot substrate apparatus for fused silica deposition comprising a hollow body tube, rod, plate, made from doped or undoped synthetic fused silica, natural quartz, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 232. The apparatus of claim 231, wherein the hollow body tube is comprised of a porous tube, rod or plate.
 233. The apparatus of claim 231, wherein the hollow body tube is comprised of a nonporous tube, rod or plate.
 234. The apparatus of claim 231, wherein the substrates comprise long hollow porous tubes.
 235. The apparatus of claim 231, wherein the substrate is a hollow porous tube and the substrate heater is a hollow porous tube made from same or different material.
 236. The apparatus of claim 231, wherein the substrate is a hollow porous tube made from silica, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 237. The apparatus of claim 231, wherein the substrate heater is a hollow tube made from silica, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof.
 238. The apparatus of claim 231, wherein the substrate is a hollow porous or nonporous tube of doped or undoped synthetic fused silica or natural quartz.
 239. The apparatus of claim 231, wherein the substrate is a porous or non-porous rod of doped or undoped synthetic fused silica or natural quartz.
 240. The apparatus of claim 231, wherein the substrate heater is a hollow porous or non porous tube, rod, plate any other shape, and has constant or variable cross section over its length, width and height, made from doped or undoped synthetic fused silica or natural quartz, ceramic, graphite, silicon carbide, boron nitride, metal, metal alloys, other suitable substrate materials and their combination thereof. 